Affiliate Faculty
Prof Eisner's group is currently working on high-temperature, wide-bandgap gallium nitride (GaN)-based radiation-hardened microelectronics and sensors for extreme environment applications. This includes radiation-tolerant transistors, neutron detectors, and Hall-effect magnetic field sensors. Prof Eisner's group is actively looking to collaborate with fusion experts to learn what needs are in the field, in parallel with working on other applications primarily in space exploration.